mbr20xxxct-e3, mbrf20xxxct-e3, mbrb20xxxct-e3 www.vishay.com vishay general semiconductor revision: 10-may-16 1 document number: 89033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual common-cathode high voltage trench mos barrier schottky rectifier features ? trench mos schottky technology ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab and ito-220ab package) ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency rect ifier of switching mode power supplies, freewheeling diodes, dc /dc converters or polarity protection application. mechanical data case: to-220ab, ito-220ab, to-263ab molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum ? ? ? primary characteristics i f(av) 2 x 10 a v rrm 90 v to 100 v i fsm 150 a v f 0.65 v t j max. 150 c package to-220ab, ito-220ab, to-263ab diode variation common cathode case pin 2 pin 1 pin 3 to-220ab mbr2090ct mbr20100ct mbrb2090ct mbrb20100ct pin 1 pin 2 k heatsink 1 2 3 1 2 k pin 2 pin 1 pin 3 mbrf2090ct mbrf20100ct ito-220ab tmbs ? to-263ab 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mbr2090ct mbr20100ct unit maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at t c = 133 c total device i f(av) 20 a per diode 10 peak forward surge current 8.3 ms si ngle half sine-wave superimposed on rated load per diode i fsm 150 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh per diode e as 130 mj peak repetitive reverse current at t p = 2 s, 1 khz, ? t j = 38 c 2 c per diode i rrm 0.5 a voltage rate of change (rated v r ) dv/dt 10 000 v/s isolation voltage (ito-220ab only) from terminal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg -65 to +150 c
mbr20xxxct-e3, mbrf20xxxct-e3, mbrb20xxxct-e3 www.vishay.com vishay general semiconductor revision: 10-may-16 2 document number: 89033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol max. unit maximum instantaneous forward voltage ? per diode i f = 10 a t c = 25 c v f (1) 0.80 v i f = 10 a t c = 125 c 0.65 i f = 20 a t c = 125 c 0.75 maximum reverse current per diode at working peak reverse voltage t j = 25 c i r (2) 100 a t j = 125 c 6.0 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mbr mbrf mbrb unit typical thermal resistance per diode r ? ja 60 - 60 c/w r ? jc 2.0 3.5 2.0 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab mbr20100ct-e3/4w 1.88 4w 50/tube tube ito-220ab mbrf20100ct-e3/4w 1.75 4w 50/tube tube to-263ab MBRB20100CT-E3/4w 1.38 4w 50/tube tube to-263ab MBRB20100CT-E3/8w 1.38 8w 800/reel tape and reel 0 4 8 12 20 0 50 100 150 16 case temperat u re (c) a v erage for w ard c u rrent (a) resisti v e or ind u cti v e load mbrf mbr & mbrb 40 60 100 8 0 140 120 160 1 100 10 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
mbr20xxxct-e3, mbrf20xxxct-e3, mbrb20xxxct-e3 www.vishay.com vishay general semiconductor revision: 10-may-16 3 document number: 89033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forw ard characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance per diode fig. 7 - typical transient thermal impedance per diode 0 0.2 0.1 0.5 1.0 0.4 0.3 1 100 10 0.01 0.1 0.6 0.7 0. 8 0.9 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent (ma) 20 10 100 40 60 8 0 1 10 0.01 0.1 100 0.001 30 50 70 90 t j = 150 c t j = 125 c t j = 25 c 1 10 100 1000 10 000 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1 mhz v sig = 50 m v p-p 0.01 10 1 100 10 100 0.1 0.1 1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) j u nction to case mbr(b) 0.1 10 1 100 1 10 0.001 0.1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) j u nction to case mbrf 0.01
mbr20xxxct-e3, mbrf20xxxct-e3, mbrb20xxxct-e3 www.vishay.com vishay general semiconductor revision: 10-may-16 4 document number: 89033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) 0.404 (10.26) 0.3 8 4 (9.75) 0.076 ref. (1.93) ref. 45 ref. 0.600 (15.24) 0.5 8 0 (14.73) pi n 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.3 8 ) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.076 ref. (1.93) ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 7 ref. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.190 (4. 8 3) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 7 ref. 0.110 (2.79) 0.100 (2.54) 0.02 8 (0.71) 0.020 (0.51) ito-220ab 3 2 1 0.105 (2.67) 0.095 (2.41) to-220ab 0.113 (2.87) 0.103 (2.62) 0.415 (10.54) 0.380 (9.65) 0.635 (16.13) 0.625 (15.87) pin 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.161 (4.08) 0.139 (3.53) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) to-263ab mountin g pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
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